APTGT35H120T3G APTGT35H120T3G C rev 2 october, 2012 1-6 www.microsemi.com absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v i c continuous collector current t c = 25c 55 a t c = 80c 35 i cm pulsed collector current t c = 25c 70 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 208 w rbsoa reverse bias safe operating area t j = 125c 70a@1150v these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com q3 1110 q1 cr1 7 22 13 14 cr3 3 30 29 32 1819 23 8 15 31 r1 16 4 cr4 cr2 q2 q4 26 27 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 v ces = 1200v i c = 35a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? fast trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive tc of vcesat ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full - bridge fast trench + field stop igbt3 power module downloaded from: http:///
APTGT35H120T3G APTGT35H120T3G C rev 2 october, 2012 2-6 www.microsemi.com all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 25c 250 a t j = 125c 500 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 35a t j = 25c 1.7 2.1 v t j = 125c 2.0 v ge ( th ) gate threshold voltage v ge = v ce , i c = 1.5ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v, v ce = 25v f = 1mhz 2.5 nf c res reverse transfer capacitance 0.15 t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 600v i c = 35a r g = 27 90 ns t r rise time 30 t d(off) turn-off delay time 420 t f fall time 70 t d(on) turn-on delay time inductive switching (125c) v ge = 15v v bus = 600v i c = 35a r g = 27 90 ns t r rise time 50 t d(off) turn-off delay time 520 t f fall time 90 e on turn-on switching energy v ge = 15v v bus = 600v i c = 35a r g = 27 t j = 125c 3.5 mj e off turn-off switching energy 4.1 reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v t j = 25c 250 a t j = 125c 500 i f dc forward current tc = 70c 30 a v f diode forward voltage i f = 30a 2.0 2.5 v i f = 60a 2.3 i f = 30a t j = 125c 1.8 t rr reverse recovery time i f = 30a v r = 800v di/dt =200a/s t j = 25c 370 ns t j = 125c 500 q rr reverse recovery charge t j = 25c 660 nc t j = 125c 3450 e r reverse recovery energy i f = 30a v r = 800v di/dt =1000a/s t j = 125c 1.6 mj downloaded from: http:///
APTGT35H120T3G APTGT35H120T3G C rev 2 october, 2012 3-6 www.microsemi.com temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k b 25/85 t 25 = 298.15 k 3952 k ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance igbt 0.6 c/w diode 1.2 v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g sp3 package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGT35H120T3G APTGT35H120T3G C rev 2 october, 2012 4-6 www.microsemi.com typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 10 20 30 40 50 60 70 80 00.511.522.533.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 10 20 30 40 50 60 70 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 10 20 30 40 50 60 70 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 1 2 3 4 5 6 7 8 0 1020304050607080 i c (a) e (mj) v ce = 600v v ge = 15v r g = 27 ? t j = 125c eon eoff 2 3 4 5 6 7 8 25 45 65 85 105 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 35a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 10 20 30 40 50 60 70 80 0 400 800 1200 1600 v ce (v) i c (a) v ge =15v t j =125c r g =27 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) downloaded from: http:///
APTGT35H120T3G APTGT35H120T3G C rev 2 october, 2012 5-6 www.microsemi.com forward characteristic of diode t j =25c t j =125c 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 0 102030405060 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =27 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode downloaded from: http:///
APTGT35H120T3G APTGT35H120T3G C rev 2 october, 2012 6-6 www.microsemi.com disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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